Tulkot latviski

Transistor: IGBT | PT | 1.2kV | 20A | 250W | TO247-3

EB Kods: EB2141065131

Ražotāja preces kods: 
APT13GP120BDQ1G

Ražotājs, zīmols: 
MICROCHIP (MICROSEMI)

17,42 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
TechnologyPOWER MOS 7®
TechnologyPT
Collector-emitter voltage1.2kV
Collector current20A
Power dissipation250W
CaseTO247-3
Gate-emitter voltage±20V
Pulsed collector current50A
MountingTHT
Gate charge55nC
Kind of packagetube
Turn-on time21ns
Turn-off time270ns
Features of semiconductor devicesintegrated anti-parallel diode