Tulkot latviski

Transistor: IGBT | BiMOSFET™ | 3kV | 55A | 625W | TO264

EB Kods: EB104672748

Ražotāja preces kods: 
IXBK55N300

Ražotājs, zīmols: 
IXYS

145,37 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
TechnologyBiMOSFET™
Collector-emitter voltage3kV
Collector current55A
Power dissipation625W
CaseTO264
Gate-emitter voltage±20V
Pulsed collector current600A
MountingTHT
Gate charge335nC
Kind of packagetube
Turn-on time637ns
Turn-off time475ns
Features of semiconductor deviceshigh voltage