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Transistor: IGBT | BiMOSFET™ | 1.7kV | 75A | 1.04kW | TO264

EB Kods: EB1226255015

Ražotāja preces kods: 
IXBK75N170

Ražotājs, zīmols: 
IXYS

83,52 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorIGBT
TechnologyBiMOSFET™
Collector-emitter voltage1.7kV
Collector current75A
Power dissipation1.04kW
CaseTO264
Gate-emitter voltage±20V
Pulsed collector current580A
MountingTHT
Gate charge0.35µC
Kind of packagetube
Turn-on time277ns
Turn-off time840ns
Features of semiconductor deviceshigh voltage