Tulkot latviski
Transistor: IGBT | 650V | 75A | 278W | TO247 | Eoff: 2.04mJ | Eon: 3.77mJ
Transistor: IGBT | 650V | 75A | 278W | TO247 | Eoff: 2.04mJ | Eon: 3.77mJ
EB Kods: EB1586118112
Ražotāja preces kods: AOK75B65H1
Ražotāja preces kods:
AOK75B65H1
Ražotājs, zīmols: ALPHA & OMEGA SEMICONDUCTOR
Ražotājs, zīmols:
ALPHA & OMEGA SEMICONDUCTOR
7,50 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Collector-emitter voltage | 650V |
Collector current | 75A |
Power dissipation | 278W |
Case | TO247 |
Gate-emitter voltage | ±30V |
Pulsed collector current | 225A |
Mounting | THT |
Gate charge | 109nC |
Kind of package | tube |
Turn-on time | 140ns |
Turn-off time | 319ns |
Collector-emitter saturation voltage | 1.85V |
Turn-off switching energy | 2.04mJ |
Turn-on switching energy | 3.77mJ |