Tulkot latviski
Transistor: IGBT | 650V | 60A | 166W | TO247 | Eoff: 1.17mJ | Eon: 2.36mJ
Transistor: IGBT | 650V | 60A | 166W | TO247 | Eoff: 1.17mJ | Eon: 2.36mJ
EB Kods: EB2071486058
Ražotāja preces kods: AOK60B65H2AL
Ražotāja preces kods:
AOK60B65H2AL
Ražotājs, zīmols: ALPHA & OMEGA SEMICONDUCTOR
Ražotājs, zīmols:
ALPHA & OMEGA SEMICONDUCTOR
3,99 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Collector-emitter voltage | 650V |
Collector current | 60A |
Power dissipation | 166W |
Case | TO247 |
Gate-emitter voltage | ±30V |
Pulsed collector current | 180A |
Mounting | THT |
Gate charge | 84nC |
Kind of package | tube |
Turn-on time | 113ns |
Turn-off time | 270ns |
Collector-emitter saturation voltage | 1.95V |
Turn-off switching energy | 1.17mJ |
Turn-on switching energy | 2.36mJ |