Tulkot latviski
Transistor: IGBT | 650V | 5A | 10W | TO220F | Eoff: 0.12mJ | Eon: 0.09mJ
Transistor: IGBT | 650V | 5A | 10W | TO220F | Eoff: 0.12mJ | Eon: 0.09mJ
EB Kods: EB1907700866
Ražotāja preces kods: AOTF5B65M1
Ražotāja preces kods:
AOTF5B65M1
Ražotājs, zīmols: ALPHA & OMEGA SEMICONDUCTOR
Ražotājs, zīmols:
ALPHA & OMEGA SEMICONDUCTOR
1,10 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Collector-emitter voltage | 650V |
Collector current | 5A |
Power dissipation | 10W |
Case | TO220F |
Gate-emitter voltage | ±30V |
Pulsed collector current | 15A |
Mounting | THT |
Gate charge | 14nC |
Kind of package | tube |
Turn-on time | 21ns |
Turn-off time | 157ns |
Collector-emitter saturation voltage | 1.87V |
Turn-off switching energy | 0.12mJ |
Turn-on switching energy | 0.09mJ |