Tulkot latviski
Transistor: IGBT | 650V | 50A | 188W | TO247 | Eoff: 0.85mJ | Eon: 1.92mJ
Transistor: IGBT | 650V | 50A | 188W | TO247 | Eoff: 0.85mJ | Eon: 1.92mJ
EB Kods: EB1747006895
Ražotāja preces kods: AOK50B65H1
Ražotāja preces kods:
AOK50B65H1
Ražotājs, zīmols: ALPHA & OMEGA SEMICONDUCTOR
Ražotājs, zīmols:
ALPHA & OMEGA SEMICONDUCTOR
5,67 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Collector-emitter voltage | 650V |
Collector current | 50A |
Power dissipation | 188W |
Case | TO247 |
Gate-emitter voltage | ±30V |
Pulsed collector current | 150A |
Mounting | THT |
Gate charge | 76nC |
Kind of package | tube |
Turn-on time | 111ns |
Turn-off time | 206ns |
Collector-emitter saturation voltage | 1.9V |
Turn-off switching energy | 0.85mJ |
Turn-on switching energy | 1.92mJ |