Tulkot latviski

Transistor: IGBT | 650V | 30A | 208W | TO247

EB Kods: EB1012729468

Ražotāja preces kods: 
DG30X07T2

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

 3,94 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
Collector-emitter voltage650V
Collector current30A
Power dissipation208W
CaseTO247
Gate-emitter voltage±20V
Pulsed collector current90A
MountingTHT
Gate charge0.22µC
Kind of packagetube
Turn-on time0.1µs
Turn-off time306ns
Features of semiconductor devicesintegrated anti-parallel diode