Tulkot latviski

Transistor: IGBT | 650V | 30A | 111W | TO247-3

EB Kods: EB605842156

Ražotāja preces kods: 
RGS60TS65DHRC11

Ražotājs, zīmols: 
ROHM SEMICONDUCTOR

 8,82 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
Collector-emitter voltage650V
Collector current30A
Power dissipation111W
CaseTO247-3
Gate-emitter voltage±30V
Pulsed collector current90A
MountingTHT
Gate charge36nC
Kind of packagetube
Turn-on time46ns
Turn-off time290ns
Features of semiconductor devicesintegrated anti-parallel diode