Tulkot latviski
Transistor: IGBT | 650V | 20A | 18W | TO220F | Eoff: 0.27mJ | Eon: 0.47mJ
Transistor: IGBT | 650V | 20A | 18W | TO220F | Eoff: 0.27mJ | Eon: 0.47mJ
EB Kods: EB989047562
Ražotāja preces kods: AOTF20B65M1
Ražotāja preces kods:
AOTF20B65M1
Ražotājs, zīmols: ALPHA & OMEGA SEMICONDUCTOR
Ražotājs, zīmols:
ALPHA & OMEGA SEMICONDUCTOR
3,21 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Collector-emitter voltage | 650V |
Collector current | 20A |
Power dissipation | 18W |
Case | TO220F |
Gate-emitter voltage | ±30V |
Pulsed collector current | 60A |
Mounting | THT |
Gate charge | 46nC |
Kind of package | tube |
Turn-on time | 51ns |
Turn-off time | 166ns |
Collector-emitter saturation voltage | 1.7V |
Turn-off switching energy | 0.27mJ |
Turn-on switching energy | 0.47mJ |