Tulkot latviski

Transistor: IGBT | 650V | 120A | 893W | TO247PLUS

EB Kods: EB1196193930

Ražotāja preces kods: 
DG120X07T2

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

17,77 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 8 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorIGBT
Collector-emitter voltage650V
Collector current120A
Power dissipation893W
CaseTO247PLUS
Gate-emitter voltage±20V
Pulsed collector current360A
MountingTHT
Gate charge0.86µC
Kind of packagetube
Turn-on time282ns
Turn-off time334ns
Features of semiconductor devicesintegrated anti-parallel diode