Tulkot latviski
Transistor: IGBT | 600V | 10A | 16.7W | TO220F | Eoff: 0.16mJ | Eon: 0.35mJ
Transistor: IGBT | 600V | 10A | 16.7W | TO220F | Eoff: 0.16mJ | Eon: 0.35mJ
EB Kods: EB1206465593
Ražotāja preces kods: AOTF10B60D
Ražotāja preces kods:
AOTF10B60D
Ražotājs, zīmols: ALPHA & OMEGA SEMICONDUCTOR
Ražotājs, zīmols:
ALPHA & OMEGA SEMICONDUCTOR
2,35 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Collector-emitter voltage | 600V |
Collector current | 10A |
Power dissipation | 16.7W |
Case | TO220F |
Gate-emitter voltage | ±20V |
Pulsed collector current | 40A |
Mounting | THT |
Gate charge | 17.4nC |
Kind of package | tube |
Turn-on time | 25ns |
Turn-off time | 80.8ns |
Collector-emitter saturation voltage | 1.53V |
Turn-off switching energy | 0.16mJ |
Turn-on switching energy | 0.35mJ |