Tulkot latviski

Transistor: IGBT | 1.8kV | 40A | 375W | TO3PN

EB Kods: EB84094624

Ražotāja preces kods: 
GT40WR21,Q(O

Ražotājs, zīmols: 
TOSHIBA

 18,23  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
Collector-emitter voltage1.8kV
Collector current40A
Power dissipation375W
CaseTO3PN
Gate-emitter voltage±25V
Pulsed collector current80A
MountingTHT
Kind of packagetube
Turn-on time950ns
Turn-off time570ns
Features of semiconductor devicesintegrated anti-parallel diode