Tulkot latviski

Transistor: IGBT | 1.2kV | 50A | 535W | MAX247

EB Kods: EB1532374641

Ražotāja preces kods: 
STGYA50H120DF2

Ražotājs, zīmols: 
STMicroelectronics

 15,75  
Ar PVN / gb
Pieejams piegādātāja noliktavā 8 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
Collector-emitter voltage1.2kV
Collector current50A
Power dissipation535W
CaseMAX247
Gate-emitter voltage±20V
Pulsed collector current200A
MountingTHT
Gate charge0.21µC
Kind of packagetube
Features of semiconductor devicesintegrated anti-parallel diode