Tulkot latviski

Transistor: IGBT | 1.2kV | 40A | 277W | TO247-3

EB Kods: EB330778063

Ražotāja preces kods: 
FGH40T120SMD-F155

Ražotājs, zīmols: 
ONSEMI

 25,53  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
Collector-emitter voltage1.2kV
Collector current40A
Power dissipation277W
CaseTO247-3
Gate-emitter voltage±25V
Pulsed collector current160A
MountingTHT
Gate charge0.37µC
Kind of packagetube
Features of semiconductor devicesintegrated anti-parallel diode