Tulkot latviski

Transistor: IGBT | 1200V | 75A | 852W | TO247PLUS

EB Kods: EB294031639

Ražotāja preces kods: 
DG75X12T2

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

15,71 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
Collector-emitter voltage1.2kV
Collector current75A
Power dissipation852W
CaseTO247PLUS
Gate-emitter voltage±20V
Pulsed collector current225A
MountingTHT
Gate charge0.49µC
Kind of packagetube
Turn-on time163ns
Turn-off time559ns
Features of semiconductor devicesintegrated anti-parallel diode