Tulkot latviski

Transistor: IGBT | 1200V | 25A | 348W | TO247

EB Kods: EB1502788984

Ražotāja preces kods: 
DG25X12T2

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

 5,97 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
Collector-emitter voltage1.2kV
Collector current25A
Power dissipation348W
CaseTO247
Gate-emitter voltage±20V
Pulsed collector current75A
MountingTHT
Gate charge0.19µC
Kind of packagetube
Turn-on time36ns
Turn-off time362ns
Features of semiconductor devicesintegrated anti-parallel diode