Tulkot latviski
Transistor: IGBT | 600V | 6A | 28W | TO252 | Eoff: 0.09mJ | Eon: 0.12mJ
Transistor: IGBT | 600V | 6A | 28W | TO252 | Eoff: 0.09mJ | Eon: 0.12mJ
EB Kods: EB798774161
Ražotāja preces kods: AOD6B60M1
Ražotāja preces kods:
AOD6B60M1
Ražotājs, zīmols: ALPHA & OMEGA SEMICONDUCTOR
Ražotājs, zīmols:
ALPHA & OMEGA SEMICONDUCTOR
1,10 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Collector-emitter voltage | 600V |
Collector current | 6A |
Power dissipation | 28W |
Case | TO252 |
Gate-emitter voltage | ±30V |
Pulsed collector current | 18A |
Mounting | SMD |
Gate charge | 14nC |
Kind of package | reel |
Kind of package | tape |
Turn-on time | 20ns |
Turn-off time | 158ns |
Collector-emitter saturation voltage | 1.7V |
Turn-off switching energy | 0.09mJ |
Turn-on switching energy | 0.12mJ |