Tulkot latviski
Transistor: P-MOSFET | unipolar | -450V | -3A | Idm: -22.4A | 41W | TO251
Transistor: P-MOSFET | unipolar | -450V | -3A | Idm: -22.4A | 41W | TO251
EB Kods: EB1794970995
Ražotāja preces kods: DMP45H4D9HJ3
Ražotāja preces kods:
DMP45H4D9HJ3
Ražotājs, zīmols: DIODES INCORPORATED
Ražotājs, zīmols:
DIODES INCORPORATED
1,14 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Polarisation | unipolar |
Drain-source voltage | -450V |
Drain current | -3A |
Pulsed drain current | -22.4A |
Power dissipation | 41W |
Case | TO251 |
Gate-source voltage | ±30V |
On-state resistance | 4.9Ω |
Mounting | THT |
Gate charge | 13.7nC |
Kind of package | tube |
Kind of channel | enhanced |