Tulkot latviski
Transistor: P-MOSFET | unipolar | -40V | -3.1A | Idm: -12.4A | 1.25W
Transistor: P-MOSFET | unipolar | -40V | -3.1A | Idm: -12.4A | 1.25W
EB Kods: EB598071969
Ražotāja preces kods: PJA3441_R1_00501
Ražotāja preces kods:
PJA3441_R1_00501
Ražotājs, zīmols: PanJit Semiconductor
Ražotājs, zīmols:
PanJit Semiconductor
0,54 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | -40V |
| Drain current | -3.1A |
| Pulsed drain current | -12.4A |
| Power dissipation | 1.25W |
| Case | SOT23 |
| Gate-source voltage | ±20V |
| On-state resistance | 108mΩ |
| Mounting | SMD |
| Gate charge | 6nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |