Tulkot latviski
Transistor: P-MOSFET | unipolar | -30V | -3.6A | Idm: -20A | 1.9W | SOT23
Transistor: P-MOSFET | unipolar | -30V | -3.6A | Idm: -20A | 1.9W | SOT23
EB Kods: EB106054302
Ražotāja preces kods: DMG2307LQ-7
Ražotāja preces kods:
DMG2307LQ-7
Ražotājs, zīmols: DIODES INCORPORATED
Ražotājs, zīmols:
DIODES INCORPORATED
0,47 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | -30V |
| Drain current | -3.6A |
| Pulsed drain current | -20A |
| Power dissipation | 1.9W |
| Case | SOT23 |
| Gate-source voltage | ±20V |
| On-state resistance | 0.134Ω |
| Mounting | SMD |
| Gate charge | 8.2nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |
| Application | automotive industry |