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Transistor: P-MOSFET | unipolar | -30V | -0.33A | 0.17W | SOT23,TO236AB
Transistor: P-MOSFET | unipolar | -30V | -0.33A | 0.17W | SOT23,TO236AB
EB Kods: EB1796736384
Ražotāja preces kods: BSH202,215
Ražotāja preces kods:
BSH202,215
Ražotājs, zīmols: NEXPERIA
Ražotājs, zīmols:
NEXPERIA
0,50 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -0.33A |
Power dissipation | 0.17W |
Case | SOT23 |
Case | TO236AB |
Gate-source voltage | ±20V |
On-state resistance | 0.9Ω |
Mounting | SMD |
Gate charge | 2.9nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | logic level |