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Transistor: P-MOSFET | unipolar | -20V | -2.4A | 0.5W | SuperSOT-3

EB Kods: EB504527886

Ražotāja preces kods: 
FDN302P

Ražotājs, zīmols: 
ONSEMI

 0,65 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
TechnologyPowerTrench®
Polarisationunipolar
Drain-source voltage-20V
Drain current-2.4A
Power dissipation0.5W
CaseSuperSOT-3
Gate-source voltage±12V
On-state resistance84mΩ
MountingSMD
Gate charge14nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor deviceslogic level