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Transistor: P-MOSFET | unipolar | -20V | -2.2A | Idm: -10A | 0.45W | SOT23

EB Kods: EB683342982

Ražotāja preces kods: 
SI2301BDS-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,65 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorP-MOSFET
Polarisationunipolar
Drain-source voltage-20V
Drain current-2.2A
Pulsed drain current-10A
Power dissipation0.45W
CaseSOT23
Gate-source voltage±8V
On-state resistance0.1Ω
MountingSMD
Gate charge10nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced