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Transistor: P-MOSFET | unipolar | -12V | -2.6A | 0.5W | SuperSOT-3

EB Kods: EB1212054615

Ražotāja preces kods: 
FDN306P

Ražotājs, zīmols: 
ONSEMI

 0,63  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorP-MOSFET
TechnologyPowerTrench®
Polarisationunipolar
Drain-source voltage-12V
Drain current-2.6A
Power dissipation0.5W
CaseSuperSOT-3
Gate-source voltage±8V
On-state resistance80mΩ
MountingSMD
Gate charge17nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor deviceslogic level