Tulkot latviski
Transistor: P-MOSFET | unipolar | -100V | -900mA | Idm: -3.6A | 1.25W
Transistor: P-MOSFET | unipolar | -100V | -900mA | Idm: -3.6A | 1.25W
EB Kods: EB522465262
Ražotāja preces kods: PJA3471_R1_00501
Ražotāja preces kods:
PJA3471_R1_00501
Ražotājs, zīmols: PanJit Semiconductor
Ražotājs, zīmols:
PanJit Semiconductor
0,50 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Polarisation | unipolar |
Drain-source voltage | -100V |
Drain current | -900mA |
Pulsed drain current | -3.6A |
Power dissipation | 1.25W |
Case | SOT23 |
Gate-source voltage | ±20V |
On-state resistance | 0.7Ω |
Mounting | SMD |
Gate charge | 8nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |