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Transistor: P-MOSFET | TrenchP™ | unipolar | -100V | -18A | 83W | TO252

EB Kods: EB437243176

Ražotāja preces kods: 
IXTY18P10T

Ražotājs, zīmols: 
IXYS

 4,68  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorP-MOSFET
TechnologyTrenchP™
Polarisationunipolar
Drain-source voltage-100V
Drain current-18A
Power dissipation83W
CaseTO252
Gate-source voltage±15V
On-state resistance0.12Ω
MountingSMD
Gate charge39nC
Kind of packagetube
Kind of channelenhanced
Reverse recovery time62ns