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Transistor: P-MOSFET | TrenchFET® | unipolar | -8V | -3.5A | Idm: -20A

EB Kods: EB371710276

Ražotāja preces kods: 
SI2305CDS-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,28 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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Product Properties

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-8V
Drain current-3.5A
Pulsed drain current-20A
Power dissipation1.1W
CaseSOT23
Gate-source voltage±8V
On-state resistance65mΩ
MountingSMD
Gate charge30nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced