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Transistor: P-MOSFET | TrenchFET® | unipolar | -40V | -11A | Idm: -80A
Transistor: P-MOSFET | TrenchFET® | unipolar | -40V | -11A | Idm: -80A
EB Kods: EB875123213
Ražotāja preces kods: SI4401FDY-T1-GE3
Ražotāja preces kods:
SI4401FDY-T1-GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
1,24 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -40V |
Drain current | -11A |
Pulsed drain current | -80A |
Power dissipation | 3.2W |
Case | SO8 |
Gate-source voltage | ±20V |
On-state resistance | 18.3mΩ |
Mounting | SMD |
Gate charge | 31nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |