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Transistor: P-MOSFET | Trench | unipolar | -30V | -2.7A | Idm: -12A | 1.1W
Transistor: P-MOSFET | Trench | unipolar | -30V | -2.7A | Idm: -12A | 1.1W
EB Kods: EB1537697426
Ražotāja preces kods: SI2307-TP
Ražotāja preces kods:
SI2307-TP
Ražotājs, zīmols: MICRO COMMERCIAL COMPONENTS
Ražotājs, zīmols:
MICRO COMMERCIAL COMPONENTS
0,47 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -2.7A |
Pulsed drain current | -12A |
Power dissipation | 1.1W |
Case | SOT23 |
Gate-source voltage | ±20V |
On-state resistance | 138mΩ |
Mounting | SMD |
Gate charge | 4.1nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |