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Transistor: P-MOSFET | Trench | unipolar | -20V | -1.3A | Idm: -8.4A
Transistor: P-MOSFET | Trench | unipolar | -20V | -1.3A | Idm: -8.4A
EB Kods: EB1368959040
Ražotāja preces kods: NXV65UPR
Ražotāja preces kods:
NXV65UPR
Ražotājs, zīmols: NEXPERIA
Ražotājs, zīmols:
NEXPERIA
0,42 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | -20V |
Drain current | -1.3A |
Pulsed drain current | -8.4A |
Power dissipation | 0.34W |
Case | SOT23 |
Case | TO236AB |
Gate-source voltage | ±8V |
On-state resistance | 0.15Ω |
Mounting | SMD |
Gate charge | 5.8nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |