Tulkot latviski
Transistor: P-MOSFET | TRENCH POWER LV | unipolar | -16V | -5.6A | 2.2W
Transistor: P-MOSFET | TRENCH POWER LV | unipolar | -16V | -5.6A | 2.2W
EB Kods: EB1725941634
Ražotāja preces kods: YJQ4666B
Ražotāja preces kods:
YJQ4666B
Ražotājs, zīmols: YANGJIE TECHNOLOGY
Ražotājs, zīmols:
YANGJIE TECHNOLOGY
0,12 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | TRENCH POWER LV |
Polarisation | unipolar |
Drain-source voltage | -16V |
Drain current | -5.6A |
Pulsed drain current | -28A |
Power dissipation | 2.2W |
Case | DFN2020-6 |
Gate-source voltage | ±10V |
On-state resistance | 60mΩ |
Mounting | SMD |
Gate charge | 7.2nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |