Tulkot latviski
Transistor: N-MOSFET | WMOS™ S | unipolar | 800V | 8.4A | Idm: 56A | 183W
Transistor: N-MOSFET | WMOS™ S | unipolar | 800V | 8.4A | Idm: 56A | 183W
EB Kods: EB639126688
Ražotāja preces kods: WMJ80R350S
Ražotāja preces kods:
WMJ80R350S
Ražotājs, zīmols: WAYON
Ražotājs, zīmols:
WAYON
8,60 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | WMOS™ S |
| Polarisation | unipolar |
| Drain-source voltage | 800V |
| Drain current | 8.4A |
| Pulsed drain current | 56A |
| Power dissipation | 183W |
| Case | TO247-3 |
| Gate-source voltage | ±30V |
| On-state resistance | 0.33Ω |
| Mounting | THT |
| Gate charge | 31nC |
| Kind of package | tube |
| Kind of channel | enhanced |