Tulkot latviski

Transistor: N-MOSFET | WMOS™ F2 | unipolar | 650V | 45A | Idm: 245A | 410W

EB Kods: EB1229969498

Ražotāja preces kods: 
WMJ80N65F2

Ražotājs, zīmols: 
WAYON

 18,72  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
TechnologyWMOS™ F2
Polarisationunipolar
Drain-source voltage650V
Drain current45A
Pulsed drain current245A
Power dissipation410W
CaseTO247-3
Gate-source voltage±30V
On-state resistance37mΩ
MountingTHT
Gate charge26.2nC
Kind of packagetube
Kind of channelenhanced
Reverse recovery time190ns