Tulkot latviski

Transistor: N-MOSFET | unipolar | 650V | 2A | Idm: 9.6A | 38W | TO251

EB Kods: EB127605011

Ražotāja preces kods: 
SPU03N60C3BKMA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

1,25 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
TechnologyCoolMOS™
Polarisationunipolar
Drain-source voltage650V
Drain current2A
Pulsed drain current9.6A
Power dissipation38W
CaseTO251
Gate-source voltage±20V
On-state resistance1.4Ω
MountingTHT
Gate charge2nC
Kind of packagetube
Kind of channelenhanced