Tulkot latviski

Transistor: N-MOSFET | unipolar | 500V | 6.6A | Idm: 121A | 114W | TO220AB

EB Kods: EB1334065787

Ražotāja preces kods: 
SIHP12N50E-GE3

Ražotājs, zīmols: 
VISHAY

2,52 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage500V
Drain current6.6A
Pulsed drain current121A
Power dissipation114W
CaseTO220AB
Gate-source voltage±30V
On-state resistance0.38Ω
MountingTHT
Gate charge50nC
Kind of packagetube
Kind of channelenhanced