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Transistor: N-MOSFET | unipolar | 300V | 35A | Idm: 236A | 500W | TO3PN

EB Kods: EB1746793023

Ražotāja preces kods: 
FDA59N30

Ražotājs, zīmols: 
ONSEMI

 5,91  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage300V
Drain current35A
Pulsed drain current236A
Power dissipation500W
CaseTO3PN
Gate-source voltage±30V
On-state resistance56mΩ
MountingTHT
Gate charge0.1µC
Kind of packagetube
Kind of channelenhanced