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Transistor: N-MOSFET | unipolar | 1.5kV | 12A | 890W | TO247-3 | 1.2us

EB Kods: EB662700063

Ražotāja preces kods: 
IXTH12N150

Ražotājs, zīmols: 
IXYS

 19,55  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage1.5kV
Drain current12A
Power dissipation890W
CaseTO247-3
MountingTHT
Gate charge106nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesstandard power mosfet
Reverse recovery time1.2µs