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Transistor: N-MOSFET | unipolar | 100V | 200A | 550W | TO3P | 76ns
Transistor: N-MOSFET | unipolar | 100V | 200A | 550W | TO3P | 76ns
EB Kods: EB1559083555
Ražotāja preces kods: IXTQ200N10T
Ražotāja preces kods:
IXTQ200N10T
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
9,74 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 100V |
Drain current | 200A |
Power dissipation | 550W |
Case | TO3P |
On-state resistance | 5.5mΩ |
Mounting | THT |
Gate charge | 152nC |
Kind of package | tube |
Kind of channel | enhanced |
Features of semiconductor devices | thrench gate power mosfet |
Reverse recovery time | 76ns |