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Transistor: N-MOSFET | unipolar | 100V | 200A | 550W | TO247-3 | 76ns

EB Kods: EB1114030410

Ražotāja preces kods: 
IXTH200N10T

Ražotājs, zīmols: 
IXYS

12,17 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 8 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage100V
Drain current200A
Power dissipation550W
CaseTO247-3
On-state resistance5.5mΩ
MountingTHT
Gate charge152nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesthrench gate power mosfet
Reverse recovery time76ns