Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 650V | 100A | Idm: 300A | 550W

EB Kods: EB1702261492

Ražotāja preces kods: 
DIF065SIC020

Ražotājs, zīmols: 
DIOTEC SEMICONDUCTOR

 36,08 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage650V
Drain current100A
Pulsed drain current300A
Power dissipation550W
CaseTO247-4
Gate-source voltage-5...18V
On-state resistance16mΩ
MountingTHT
Gate charge236nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal