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Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 43A | Idm: 160A | 438W

EB Kods: EB1926972845

Ražotāja preces kods: 
G3R45MT17K

Ražotājs, zīmols: 
GeneSiC SEMICONDUCTOR

 47,26 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyG3R™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.7kV
Drain current43A
Pulsed drain current160A
Power dissipation438W
CaseTO247-4
Gate-source voltage-5...15V
On-state resistance45mΩ
MountingTHT
Gate charge182nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal