Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 43A | Idm: 160A | 438W
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 43A | Idm: 160A | 438W
EB Kods: EB1691898631
Ražotāja preces kods: G3R45MT17D
Ražotāja preces kods:
G3R45MT17D
Ražotājs, zīmols: GeneSiC SEMICONDUCTOR
Ražotājs, zīmols:
GeneSiC SEMICONDUCTOR
48,62 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | G3R™ |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.7kV |
| Drain current | 43A |
| Pulsed drain current | 160A |
| Power dissipation | 438W |
| Case | TO247-3 |
| Gate-source voltage | -5...15V |
| On-state resistance | 45mΩ |
| Mounting | THT |
| Gate charge | 182nC |
| Kind of package | tube |
| Kind of channel | enhanced |