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Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 3.7A | Idm: 15A | 81W

EB Kods: EB1952603814

Ražotāja preces kods: 
S1M1000170K

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 3,46 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.7kV
Drain current3.7A
Pulsed drain current15A
Power dissipation81W
CaseTO247-4
Gate-source voltage-5...20V
On-state resistance1.9Ω
MountingTHT
Gate charge10nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal