Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 85A | Idm: 250A | 340W

EB Kods: EB131803250

Ražotāja preces kods: 
DIF120SIC022

Ražotājs, zīmols: 
DIOTEC SEMICONDUCTOR

 34,45 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current85A
Pulsed drain current250A
Power dissipation340W
CaseTO247-4
Gate-source voltage-4...18V
On-state resistance28mΩ
MountingTHT
Gate charge269nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal