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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 75A | Idm: 250A | 576W

EB Kods: EB2061863658

Ražotāja preces kods: 
S3M0016120B

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 14,44 € 
Bez PVN / gb
Pieejams piegādātāja noliktavā 10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current75A
Pulsed drain current250A
Power dissipation576W
CaseT2PAK
Gate-source voltage-4...18V
On-state resistance25mΩ
MountingSMD
Gate charge287nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal