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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 46A | Idm: 223A | 130W

EB Kods: EB1012610823

Ražotāja preces kods: 
S3M0040120K

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 9,42 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current46A
Pulsed drain current223A
Power dissipation130W
CaseTO247-4
Gate-source voltage-4...18V
On-state resistance50mΩ
MountingTHT
Gate charge143nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal