Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 46A | Idm: 105A | 323W

EB Kods: EB669773400

Ražotāja preces kods: 
MSC040SMA120B4

Ražotājs, zīmols: 
MICROCHIP TECHNOLOGY

 27,33  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current46A
Pulsed drain current105A
Power dissipation323W
CaseTO247-4
On-state resistance50mΩ
MountingTHT
Gate charge137nC
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal