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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 40A | Idm: 200A | 333W

EB Kods: EB502684025

Ražotāja preces kods: 
S3M0040120B

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 8,46 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current40A
Pulsed drain current200A
Power dissipation333W
CaseT2PAK
Gate-source voltage-4...18V
On-state resistance50mΩ
MountingSMD
Gate charge143nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal