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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 140A | Idm: 314A | 714W

EB Kods: EB1220719317

Ražotāja preces kods: 
S2M0016120K

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 47,96 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā 3 gab.
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current140A
Pulsed drain current314A
Power dissipation714W
CaseTO247-4
Gate-source voltage-5...20V
On-state resistance16mΩ
MountingTHT
Gate charge224nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal